http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. SUM1960NE 0.32a , 60v , r ds(on) 2 ? n-channel enhancement mode mosfet elektronische bauelemente 4-dec-2012 rev. a page 1 of 2 rohs compliant product a suffix of -c specifies halogen and lead-free description these miniature surface mount mosfets utilize a hig h cell density trench process to provide low r ds(on) and to ensure minimal power loss and heat dissipation. features low r ds(on) provides higher efficiency and extends battery life low thermal impedance copper leadframe sot-363 saves board space fast switching speed high performance trench technology application dc-dc converters and power management in portable and battery-powered products such as computers, pri nters, pcmcia cards, cellular and cordless telephones. package information package mpq leader size sot-363 3k 7 inch absolute maximum ratings ( t a =25c unless otherwise specified) parameter symbol ratings unit drain-source voltage v ds 60 v gate-source voltage v gs 20 v continuous drain current 1 t a =25c i d 0.32 a t a =70c 0.26 pulsed drain current 2 i dm 0.7 a continuous source current (diode conduction) 1 i s 0.25 a power dissipation 1 t a =25c p d 0.3 w t a =70c 0.21 operating junction and storage temperature range t j , t stg -55~150 c thermal resistance rating maximum junction to ambient 1 t Q 5 sec r ja 415 c / w steady state 460 notes: 1. surface mounted on 1 x 1 fr4 board. 2. pulse width limited by maximum junction tempera ture. esd protection diode 2kv sot-363 ref. millimeter ref. millimeter min. max. min. max. a 1.80 2.20 g 0.100 ref. b 1.80 2.45 h 0.525 ref. c 1.15 1.35 j 0.08 0.25 d 0.80 1.10 k 8 e 1.10 1.50 l 0.650 typ. f 0.10 0.35 b l f h c j d g k a e
http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. SUM1960NE 0.32a , 60v , r ds(on) 2 ? n-channel enhancement mode mosfet elektronische bauelemente 4-dec-2012 rev. a page 2 of 2 electrical characteristics (t a =25 c unless otherwise specified) parameter symbol min. typ. max. unit teat conditions static gate-threshold voltage v gs(th) 1 - - v v ds =v gs , i d =250ua gate-body leakage current i gss - - 10 ua v ds =0, v gs =20v zero gate voltage drain current i dss - - 1 ua v ds =48v, v gs =0 - - 50 v ds =48v, v gs =0, t j =55 c on-state drain current 1 i d(on) 0.3 - - a v ds =5v, v gs =10v drain-source on-resistance 1 r ds(on) - - 2 v gs =10v, i d =0.3a - - 3 v gs =4.5v, i d =0.2a forward transconductance 1 g fs - 8 - s v ds =4.5v, i d =0.3a diode forward voltage 1 v sd - 1.1 - v i s =0.2a, v gs =0 dynamic 2 total gate charge q g - 0.4 - nc v ds =10v, v gs =5v, i d =0.3a gate-source charge q gs - 0.1 - gate-drain charge q gd - 0.1 - turn-on delay time t d(on) - 10 - ns v dd =10v, v gen =10v, r l =30 , i d =0.3a rise time t r - 6 - turn-off delay time t d(off) - 20 - fall time t f - 3 - notes: 1. pulse test: pw Q 300us duty cycle Q 2%. 2. guaranteed by design, not subject to production testing.
|
